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Ordering number : ENA0711
JCH3201
JCH3201
Features
* * * *
NPN Epitaxial Planar Silicon Transistors
For Automotive Audios
Adoption of MBIT processes. High breakdown voltage and large current capacity. High-speed switching. High reliability. / Reliability test 2000 hours guarantee.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg When mounted on ceramic substrate (600mm20.8mm) Conditions Ratings 100 100 6 1 2 0.9 150 --55 to +150 Unit V V V A A W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=100V, IE=0A VEB=4V, IC=0A VCE=5V, IC=100mA VCE=10V, IC=100mA VCB=10V, f=1MHz 140 120 8.5 Ratings min typ max 100 100 400 MHz pF Unit nA nA
Marking : 5B
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22008EA TI IM TC-00001205 No. A0711-1/4
JCH3201
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=400mA, IB=40mA IC=400mA, IB=40mA IC=10A, IE=0A IC=1mA, RBE= IE=10A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 100 100 6 80 850 50 Ratings min typ 0.1 0.85 max 0.4 1.2 Unit V V V V V ns ns ns
Package Dimensions
unit : mm (typ) 7015A-003
2.9
0.6
Switching Time Test Circuit
0.15
PW=20s D.C.1% INPUT
IB1 OUTPUT IB2 VR 50 RB
3
0.2
RL
2.8
1.6
0.05
0.6
1
0.95
2
0.4
+ 100F
+ 470F 50V
1 : Base 2 : Emitter 3 : Collector SANYO : CPH3
--5V
0.2
IC=10IB1= --10IB2=400mA
0.9
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1.0 1.5
IC -- VCE
25mA 20mA 15mA 10mA
1.0
IC -- VBE
VCE=5V
Collector Current, IC -- A
Ta=8 5C
5mA 3mA 2mA
Collector Current, IC -- A
0.8
0.6
0.4
1mA
0.2
IB=0mA
2.0 2.5 3.0 3.5 4.0 4.5 5.0
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V
7 5
IT07233 3
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
--40C
IT13167
f T -- IC
25C
3
VCE=5V Gain-Bandwidth Product, fT -- MHz Ta=85C
2
VCE=10V
3
DC Current Gain, hFE
25C
2
100 7 5
--40C
100 7 5
3
3 2 0.01
2
3
5
7
0.1
2
3
5
Collector Current, IC -- A
1.0 IT13168
7
2 0.01
2
3
5
7
0.1
2
5
Collector Current, IC -- A
7 1.0 IT07239
No. A0711-2/4
JCH3201
5
Cob -- VCB
f=1MHz
5 3
VCE(sat) -- IC
IC / IB=10
Output Capacitance, Cob -- pF
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
3 2
2
0.1 7 5 3 2
10 7 5
Ta=
C 85
0C --4
C 25
3 2 1.0 2 3 5 7 10 2 3 5
Collector-to-Base Voltage, VCB -- V
3
100 IT07241
7
0.01 0.01
2
3
5
7
0.1
2
3
5
VBE(sat) -- IC
Collector Current, IC -- A
5
7 1.0 IT13169
ASO
IC / IB=10
3 2
ICP=2A IC=1A
<10s
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
2
Collector Current, IC -- A
1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2
1m
100
s
10 ms
0m
s s 0 50
Di
ssi
pa
tio
DC
1.0 7 5
Ta= --40C
nL
op
im
era
10
ite
tio
n
s
d
S
/B
25C
85C
Li
m
ite
d
3
2 0.01
2
3
5
7
0.1
2
3
5
Collector Current, IC -- A
5 3 2
1.0 IT13170
7
0.001 0.1
Ta=25C Single pulse When mounted on ceramic substrate (600mm20.8mm)
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2
ASO
Collector-to-Emitter Voltage, VCE -- V
1.0
IT07246
PC -- Ta
Collector Current, IC -- A
1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2
Collector Dissipation, PC -- W
ICP=2A IC=1A
<10s
1m
s
50
10
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 2 0 20 40
When mounted on ceramic substrate (600mm20.8mm)
Di
ssi
DC
pa
op
10
0 s
10 s 0
tio
nL
era
0m
s
ms
tio
im
n ite d
S
/B
Li
m
ite
d
0.001 0.1
Ta=85C Single pulse When mounted on ceramic substrate (600mm20.8mm)
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE -- V
IT13378
Ambient Temperature, Ta -- C
IT07247
No. A0711-3/4
JCH3201
JCH3201 Reliability Assurance
Test Environmental Test Temperature Cycle Thermal Shock Pressure Cooker Test (Autoclave) Endurance Test Steady State Operating Life Intermittent Operating Life High Temperature Reverse Bias Temperature Humidity Storage High Temperature Storage Low Temperature Storage Temperature Humidity Reverse Bias Electrostatic Discharges Machine Model C=200pF, R=0, 3 times 200V Ta=25C, Tj=150C Ta=25C, Tj=90C Ta=150C, VCES=100V Ta=85C, 85%RH Ta=150C Ta=-55C Ta=85C, 85%RH, VCES=100V 2000 hrs 20000 cycles 2000 hrs 2000 hrs 2000 hrs 2000 hrs 2000 hrs 10% 10% 10% 10% 10% 10% 10% --55C to 150C (30 min each) 100C to 0C (5 min each) Ta=121C, 100%RH, 203kPa 500 cycles 250 cycles 200 hrs 10% 10% 10% Test Conditions Test Time LTPD
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This catalog provides information as of February, 2008. Specifications and information herein are subject to change without notice.
PS No. A0711-4/4

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